STB80NF55-06 n - channel 55v - 0.005 w - 80a to-262/to-263 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.005 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization n through-hole i2pak (to-262) power package in tube (suffix o-1o)\ n surface-mounting d2pak (to-263) power package in tube (no suffix) or in tape & reel (suffix ot4o) description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n solenoid and relay drivers n motor control, audio amplifiers n dc-dc converters n automotive environment ? internal schematic diagram october 1999 absolute maximum ratings symbol parameter value un it v ds drain-source voltage (v gs =0) 55 v v dgr drain- gate voltage (r gs =20k w )55v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c80a i d drain current (continuous) at t c =100 o c57a i dm ( ? ) drain current (pulsed) 320 a p tot total dissipation at t c =25 o c 210 w derating factor 1.43 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 80 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds( on) i d STB80NF55-06 55 v < 0.0065 w 80 a 1 2 3 1 3 i 2 pak to-262 (suffix o-1o) d 2 pak to-263 (suffix ot4o) 1/7 .com .com .com
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.7 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =30v) 650 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 55 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d = 40 a 0.005 0.0065 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =40 a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 8000 1100 220 pf pf pf STB80NF55-06 2/7 .com .com .com .com
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =27v i d =40a r g =4.7 w v gs =10v (resistive load, see fig. 3) 35 240 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =44v i d =80a v gs = 10 v 178 29 61 230 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time vdd = 27 v i d =40a r g =4.7 w v gs =10v (resistive load, see fig. 3) 260 80 ns ns t d(off) t r(voff) t f t c turn-off delay time off-voltage rise time fall time cross-over time v dd =44v i d =80a r g =4.7 w v gs =10v (inductive load, see fig. 5) 225 55 145 205 ns ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 80 320 a a v sd ( * )forwardonvoltage i sd =80a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100 a/ m s v dd =20v t j =150 o c (see test circuit, fig. 5) 80 0.24 6 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STB80NF55-06 3/7 .com .com .com .com
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STB80NF55-06 4/7 .com .com .com .com
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data STB80NF55-06 5/7 .com .com .com .com
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.4 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 detailoao detail oao a2 p011p6/e to-263 (d 2 pak) mechanical data STB80NF55-06 6/7 .com .com .com .com
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STB80NF55-06 7/7 .com .com .com
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